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參數(shù)資料
| 型號： | MJD31 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
| 中文描述： | 3 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 205K |
| 代理商： | MJD31 |
3
Motorola Bipolar Power Transistor Device Data
0.03
IC, COLLECTOR CURRENT (AMPS)
5
0.07
0.3
3
70
50
30
300
h
VCE = 2 V
TJ = 150
°
C
100
0.1
0.7
25
°
C
–55
°
C
0.05
0.5
1
25
25
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
Figure 2. Switching Time Test Circuit
Figure 3. DC Current Gain
3
2
0.03
IC, COLLECTOR CURRENT (AMPS)
0.03
0.05 0.07 0.1
0.2
0.5 0.7
3
IB1 = IB2
IC/IB = 10
ts
′
= ts – 1/8 tf
TJ = 25
°
C
t
μ
0.3
1
0.7
0.5
0.3
0.2
ts
′
0.1
0.07
0.05
1
2
Figure 4. Turn–On Time
2
IC, COLLECTOR CURRENT (AMPS)
0.02
IC/IB = 10
TJ = 25
°
C
t
μ
1
0.7
0.5
0.3
0.1
0.07
0.05
0.03
0.003
Figure 5. “On” Voltages
IC, COLLECTOR CURRENT (AMPS)
1
0.8
V
1.4
1.2
0.4
0
+11 V
25
μ
s
0
–9 V
RB
–4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf
≤
10 ns
DUTY CYCLE = 1%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
REVERSE ALL POLARITIES FOR PNP.
500
7
10
0.03
0.07
0.3
3
0.1
0.7
0.05
0.5
1
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
0.6
0.2
0.005
0.01 0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
VCE(sat) @ IC/IB = 10
tf @ VCC = 30 V
tf @ VCC = 10 V
2.5
0
2
1.5
1
0.5
TA
TC
Figure 6. Turn–Off Time
TA (SURFACE MOUNT)
TC
TYPICAL CHARACTERISTICS
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