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參數(shù)資料
| 型號： | MJE13007 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Silicon NPN Switching Transistor(硅NPN開關(guān)晶體管) |
| 中文描述： | 硅NPN開關(guān)晶體管（硅npn型開關(guān)晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 29K |
| 代理商： | MJE13007 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.56
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEV
V
CE
= rated V
CEV
T
c
= 100
o
C
1
5
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
EB
= 9 V
1
mA
I
C
= 10 mA
400
V
I
C
= 2 A
I
C
= 5 A
I
C
= 8 A
I
C
= 5 A
I
B
= 0.4 A
I
B
= 1 A
I
B
= 2 A
I
B
= 1 A
T
c
= 100
o
C
1
1.5
3
2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 2 A
I
C
= 5 A
I
C
= 5 A
I
C
= 2 A
I
C
= 5 A
I
B
= 0.4 A
I
B
= 1 A
I
B
= 1 A
V
CE
= 5 V
V
CE
= 5 V
T
c
= 100
o
C
1.2
1.6
1.5
V
V
V
h
FE
DC Current Gain
8
6
40
30
f
T
Transition Frequency
I
C
= 0.5 A
I
E
= 0
V
CE
= 10 V
V
CB
= 10 V
f = 1 MHz
4
MHz
C
CBO
Output Capacitance
f = 0.1 MHz
110
pF
RESISTIVELOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
s
t
on
Turn-on Time
V
CC
= 125 V
I
B1
= -I
B2
= 1 A
t
p
= 25
μ
s Duty Cycle < 1%
I
C
= 5 A
0.7
t
s
Storage Time
3
ms
t
f
Fall Time
0.7
ms
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
s
t
f
Fall Time
V
CC
= 125 V
t
p
= 25
μ
s Duty Cycle < 1%
V
CC
= 125 V
t
p
= 25
μ
s Duty Cycle < 1%
T
c
= 100
o
C
I
C
= 5 A
I
B1
= 1 A
0.3
t
f
Fall Time
I
C
= 5 A
I
B1
= 1 A
0.6
μ
s
* Pulsed: Pulse duration = 300
μ
s, duty cycle 2 %
MJE13007
2/4
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