參數(shù)資料
型號： MJE200
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： NPN Epitaxial Silicon Transistor
中文描述： 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126
文件頁數(shù)： 1/4頁
文件大?。?/td> 42K
代理商： MJE200
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
M
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter- Base Voltage
I
C
Collector Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cut-off Current
Parameter
Value
40
25
8
5
15
150
- 65 ~ 150
Units
V
V
V
A
W
°
C
°
C
Test Condition
Min.
25
Max.
Units
V
nA
μ
A
nA
I
C
=10mA, I
B
=0
V
CB
=40V, I
E
=0
V
CB
=40V, I
E
=0 @ T
J
=125
°
C
V
BE
=8V, I
C
=0
V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
V
CE
=2V, I
C
=5A
I
C
=500mA, I
B
=50mA
I
C
=2A, I
C
=200mA
I
C
=5A, I
B
=1A
I
C
=5A, I
B
=1A
V
CE
=1V, I
C
=2A
V
CE
=10V, I
C
=100mA
V
CB
=10V, I
E
=0, f=0.1MHz
100
100
100
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
70
45
10
180
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.3
0.75
1.8
2.5
1.6
V
V
V
V
V
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Base- Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
65
MHz
pF
80
MJE200
Feature
Low Collector-Emitter Saturation Voltage
High Current Gain Bandwidth Product : f
T
=65MHz @ I
C
=100mA (Min.)
Complement to MJE210
1
1. Emitter 2.Collector 3.Base
TO-126
相關PDF資料
PDF描述
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相關代理商/技術(shù)參數(shù)
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