參數(shù)資料
型號(hào)： MJE16106BD
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/65頁(yè)
文件大?。?/td> 487K
代理商： MJE16106BD
3–696
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
NPN Silicon Power Transistor
Switchmode Bridge Series
. . . specifically designed for use in half bridge and full bridge off line converters.
Excellent Dynamic Saturation Characteristics
Rugged RBSOA Capability
Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V
Collector–Emitter Breakdown — V(BR)CES — 650 V
State–of–Art Bipolar Power Transistor Design
Fast Inductive Switching:
tfi = 30 ns (Typ) @ 100_C
tc = 65 ns (Typ) @ 100_C
tsv = 1.3 s (Typ) @ 100_C
Ultrafast FBSOA Specified
100_C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
Leakages
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
VCEO(sus)
400
Vdc
Collector–Emitter Breakdown Voltage
VCES
650
Vdc
Emitter–Base Voltage
VEBO
6
Vdc
Collector Current — Continuous
— Pulsed (1)
IC
ICM
8
16
Adc
Base Current — Continuous
— Pulsed (1)
IB
IBM
6
12
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derated above 25
_C
PD
100
40
0.8
Watts
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 55 to 150
_C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
R
θJC
1.25
_C/W
Maximum Lead Temperature for
Soldering Purposes 1/8
″ from
Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE16106
POWER TRANSISTORS
8 AMPERES
400 VOLTS
100 AND 125 WATTS
CASE 221A–06
TO–220AB
REV 1
相關(guān)PDF資料
PDF描述
MJE16106BS 8 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE16106BV 8 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE16106AF 8 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE16204DW 6 A, 250 V, NPN, Si, POWER TRANSISTOR
MJE16204BU 6 A, 250 V, NPN, Si, POWER TRANSISTOR
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