參數(shù)資料
型號(hào): MJE3055
廠商: ON SEMICONDUCTOR
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 互補(bǔ)性的芯片功率晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 65K
代理商: MJE3055
MJE2955T
MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
I
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The MJE3055T is a silicon epitaxial-base NPN
transistor in Jedec TO-220 package. It is
intended for power switching circuits and
general-purpose amplifiers. The complementary
PNP type is MJE2955T.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
For PNP types voltage and current values are negative.
Parameter
Value
60
70
5
10
6
75
-55 to 150
150
Unit
V
V
V
A
A
W
o
C
o
C
Collector-Emitter Voltage (I
B
= 0)
Collector-Base Voltage (I
E
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Power Dissipation at T
case
25
o
C
Storage Temperature
Max. Operating Junction Temperature
1
2
3
TO-220
1/4
相關(guān)PDF資料
PDF描述
MJE3055T General Purpose and Switching Applications
MJE3055 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS
MJE3055 General Purpose and Switching Applications
MJE3055T NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)
MJE3055 NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)
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MJE3055T 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220
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MJE3055TG 功能描述:兩極晶體管 - BJT 10A 60V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE3055TG-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR