參數(shù)資料
型號： MJE3055
廠商： ON SEMICONDUCTOR
英文描述： COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述： 互補性的芯片功率晶體管
文件頁數(shù)： 2/4頁
文件大小： 65K
代理商： MJE3055
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.66
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 30 V
700
I
CEX
Collector Cut-off
Current (V
BE
= 1.5V)
V
CE
= 70 V
T
CASE =
150
o
C
1
5
mA
mA
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CBO
= 70 V
T
CASE =
150
o
C
1
10
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
CE(sat)
Collector-Emitter
Sustaining Voltage
V
BE(on)
Base-Emitter on
Voltage
V
EBO
= 5 V
5
mA
I
C
= 200 mA
60
V
I
C
= 4 A I
B
= 0.4 A
I
C
= 10 A I
B
= 3.3 A
I
C
= 4 A V
CE
= 4 V
1.1
8
V
V
1.8
V
h
FE
DC Current Gain
I
C
= 4 A V
CE
= 4 V
I
C
= 10 A V
CE
= 4 V
20
5
70
f
T
Transistor Frequency
I
C
= 500 mA V
CE
= 10 V
f = 500 KHz
2
MHz
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
For PNP type voltage and current values are negative.
MJE2955T / MJE3055T
2/4
相關(guān)PDF資料
PDF描述
MJE3055T General Purpose and Switching Applications
MJE3055 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS
MJE3055 General Purpose and Switching Applications
MJE3055T NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)
MJE3055 NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE3055T 功能描述:兩極晶體管 - BJT NPN Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE3055T 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220
MJE3055T_09 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TG 功能描述:兩極晶體管 - BJT 10A 60V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE3055TG-TA3-T 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
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