參數(shù)資料
型號(hào)： MJE5851BS
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 8 A, 350 V, PNP, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 24/63頁
文件大?。?/td> 445K
代理商： MJE5851BS
Outline Dimensions and Leadform Options
5–6
Motorola Bipolar Power Transistor Device Data
Leadform Options — TO–220 (Case 221A)
Leadform options require assignment of a special part number before ordering.
Contact your local Motorola representative for special part number and pricing.
10,000 piece minimum quantity orders are required.
Leadform orders are non–cancellable after processing.
Leadforms apply to both Motorola Case 221A–04 and 221A–06 except as noted.
LEADFORM BC
LEADFORM AS
.100 REF.
.20 REF.
.125
± .010
0.100 TYP.
MOUNTING
SURFACE
0.750 MAX.
.736
± .010
.620
± .015
.950 MIN.
1.00 MIN.
LEADFORM AJ
CASE
221A–04
221A–06
A
0.360
± 0.010
.100 REF.
.200 REF.
.050 REF.
.06R
.017
± .004
Lead Not Trimmed
0.300 Min.
.580
± .010
.765
± .01
A
LEADFORM AU
CASE
221A–04
221A–06
A
0.920 Min.
0.885 Min.
LEADFORM 3 LEADS
.190
± .020
.095 REF.
.574
± .01
A
相關(guān)PDF資料
PDF描述
MJE5852BS 8 A, 400 V, PNP, Si, POWER TRANSISTOR
MJE5850BG 8 A, 300 V, PNP, Si, POWER TRANSISTOR
MJE5851DW 8 A, 350 V, PNP, Si, POWER TRANSISTOR
MJE5852DW 8 A, 400 V, PNP, Si, POWER TRANSISTOR
MJE5850BC 8 A, 300 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE5851G 功能描述:兩極晶體管 - BJT 8A 350V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5852 功能描述:兩極晶體管 - BJT PNP High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5852_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE PNP POWER TRANSISTOR
MJE5852G 功能描述:兩極晶體管 - BJT 8A 400V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE6040 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING
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