參數(shù)資料
型號(hào)： MJE700
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： Monolithic Construction With Built-in Base- Emitter Resistors
中文描述： 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
文件頁數(shù)： 1/4頁
文件大?。?/td> 51K
代理商： MJE700
2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
M
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Sym-
bol
V
CBO
Collector- Base Voltage : MJE700/701
: MJE702/703
V
CEO
Collector-Emitter Voltage : MJE700/701
: MJE702/703
V
EBO
Emitter- Base Voltage
I
C
Collector Current
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CEO
Parameter
Value
Unit
s
V
V
V
V
V
A
A
W
°
C
°
C
- 60
- 80
- 60
- 80
- 5
- 4
- 0.1
40
150
- 55 ~ 150
Test Condition
Min.
Max.
Units
Collector-Emitter Breakdown Voltage
: MJE700/701
: MJE702/703
I
C
= - 10mA, I
B
= 0
-60
-80
V
V
I
CEO
I
CBO
Collector Cut-off Current
: MJE700/701
: MJE702/703
V
CE
= - 60V, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
T
C
= 100
°
C
V
BE
= - 5V, I
C
= 0
-100
-100
-100
-500
μ
A
μ
A
μ
A
μ
A
Collector Cut-off Current
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
-2
mA
: MJE700/702
: MJE701/703
: ALL DEVICES
V
CE
= - 3V, I
C
= - 1.5A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 4A
I
C
= - 1.5A, I
B
= - 30mA
I
C
= - 2A, I
B
= - 40mA
I
C
= - 4A, I
B
= - 40mA
V
CE
= - 3V, I
C
= - 1.5A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 4A
750
750
100
V
CE
(sat)
Collector-Emitter Saturation Voltage
: MJE700/702
: MJE701/703
: ALL DEVICES
-2.5
-2.8
-3
V
V
V
V
BE
(on)
Base-Emitter On Voltage
: MJE700/702
: MJE701/703
: ALL DEVICES
-1.2
-2.5
-3
V
V
V
MJE700/701/702/703
Monolithic Construction With Built-in Base-
Emitter Resistors
High DC Current Gain : h
FE
= 750 (Min.) @ I
C
= -1.5 and -2.0A DC
Complement to MJE800/801/802/803
R1
R2
10k
0.6k
Equivalent Circuit
B
E
C
R1
R2
1
1. Emitter 2.Collector 3.Base
TO-126
相關(guān)PDF資料
PDF描述
MJE700 NPN (HIGH DC CURRENT GAIN)
MJE701 NPN (HIGH DC CURRENT GAIN)
MJE700 DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE700T DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE700 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE700_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE700G 功能描述:達(dá)林頓晶體管 4A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE700STU 功能描述:達(dá)林頓晶體管 PNP Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE700T 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE701 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor
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