參數(shù)資料
型號(hào): MJE700
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 功率晶體管
英文描述: Monolithic Construction With Built-in Base- Emitter Resistors
中文描述: 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 51K
代理商: MJE700
Package Demensions
2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
M
Dimensions in Millimeters
3.25
±
0.20
8.00
±
0.30
3.20
±
0.10
0.75
±
0.10
#1
0.75
±
0.10
2.28TYP
[2.28
±
0.20]
2.28TYP
[2.28
±
0.20]
1.60
±
0.10
1
±
0
3
±
0
1
1
±
0
1
±
0
1.75
±
0.20
(0.50)
(1.00)
0.50
+0.10
–0.05
TO-126
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE700_06 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE700G 功能描述:達(dá)林頓晶體管 4A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE700STU 功能描述:達(dá)林頓晶體管 PNP Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE700T 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE701 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor