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參數(shù)資料
| 型號(hào)： | MJE801 |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Monolithic Construction With Built-in Base- Emitter Resistors |
| 中文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 51K |
| 代理商： | MJE801 |
2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
M
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CBO
Collector- Base Voltage : MJE800/801
: MJE802/803
V
CEO
Collector-Emitter Voltage : MJE800/801
: MJE802/803
V
EBO
Emitter-Base Voltage
I
C
Collector Current
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CEO
Collector-Emitter Breakdown Voltage
Value
60
80
60
80
5
4
0.1
40
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
°
C
°
C
Test Condition
Min.
Max.
Units
I
CEO
: MJE800/801
: MJE802/803
I
C
= 50mA, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
T
C
= 100
°
C
V
BE
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
60
80
V
V
Collector Cut-off Current
: MJE800/801
: MJE802/803
100
100
100
500
μ
A
μ
A
μ
A
μ
A
I
CBO
Collector Cut-off Current
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain : MJE800/802
2
mA
: MJE801/803
: ALL DEVICES
750
750
100
V
CE
(sat)
Collector-Emitter Saturation Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
I
C
= 1.5A, I
B
= 30mA
I
C
= 2A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
2.5
2.8
3
V
V
V
V
BE
(on)
Base-Emitter ON Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
2.5
2.5
3
V
V
V
MJE800/801/802/803
Monolithic Construction With Built-in Base-
Emitter Resistors
High DC Current Gain : h
FE
= 750 (Min.) @ I
C
= 1.5 and 2.0A DC
Complement to MJE700/701/702/703
R1
R2
10k
0.6k
Equivalent Circuit
B
E
C
R1
R2
1
1. Emitter 2.Collector 3.Base
TO-126
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| MJE801STU | 功能描述:達(dá)林頓晶體管 NPN Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE801T | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJE802 | 功能描述:達(dá)林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE802 | 制造商:STMicroelectronics 功能描述:Darlington Bipolar Transistor 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR, NPN, 80V |
| MJE802_03 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:SILICON NPN POWER DARLINGTON TRANSISTOR |
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