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參數(shù)資料
| 型號： | MJF127 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTONS |
| 中文描述： | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 267K |
| 代理商： | MJF127 |
3
Motorola Bipolar Power Transistor Device Data
P
0
80
60
40
20
4
3
2
1
TA
TC
0
Figure 3. Maximum Power Derating
T, TEMPERATURE (
°
C)
40
60
100
120
160
80
140
TC
20
t, TIME (ms)
0.01
0.1
0.5
10
20
50
100
200
500
5K
10K
1
5
2
1
0.2
0.1
0.05
r
SINGLE PULSE
R
θ
JC(t) = r(t) R
θ
JC
TJ(pk) – TC = P(pk) R
θ
JC(t)
R
Figure 4. Thermal Response
0.5
0.3
0.03
0.02
0.2
1K
2K
30
300
3
0.3
3K
TA
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
1
10
1
30
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
TC = 25
°
C (SINGLE PULSE)
I
0.1
2
3
50
3
2
0.3
10
0.2
dc
TJ = 150
°
C
1 ms
5 ms
100
μ
s
5
0.5
5
100
20
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJF127G | 功能描述:達林頓晶體管 5A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJF13007 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| MJF13009 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJF15030 | 功能描述:兩極晶體管 - BJT 8A 150V 36W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJF15030_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS |
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