Table 21. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
tpgmchk
Program Check execution time
—
45
μs
trdrsrc
Read Resource execution time
—
30
μs
tpgm4
Program Longword execution time
—
65
145
μs
tersblk256k
Erase Flash Block execution time
256 KB program/data flash
—
435
3700
ms
tersscr
Erase Flash Sector execution time
—
14
114
ms
tpgmsec512
tpgmsec1k
tpgmsec2k
Program Section execution time
512 bytes flash
1 KB flash
2 KB flash
—
2.4
4.7
9.3
—
ms
trd1all
Read 1s All Blocks execution time
—
1.8
ms
trdonce
Read Once execution time
—
25
μs
tpgmonce
Program Once execution time
—
65
—
μs
tersall
Erase All Blocks execution time
—
870
7400
ms
tvfykey
Verify Backdoor Access Key execution time
—
30
μs
tswapx01
tswapx02
tswapx04
tswapx08
Swap Control execution time
control code 0x01
control code 0x02
control code 0x04
control code 0x08
—
200
70
—
150
30
μs
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
6.4.1.3 Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol
Description
Min.
Typ.
Max.
Unit
IDD_PGM
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
IDD_ERS
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol
Description
Min.
Max.
Unit
Notes
Program Flash
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
32
Freescale Semiconductor, Inc.