參數(shù)資料
型號(hào): MK20N512VML100R
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: RISC MICROCONTROLLER, PBGA104
封裝: 8 X 8 MM, MAPBGA-104
文件頁(yè)數(shù): 22/61頁(yè)
文件大?。?/td> 888K
代理商: MK20N512VML100R
Table 18. Flash command timing characteristics (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trdrsrc
Read Resource execution time
35
μs
tpgm4
Program Longword execution time
50
TBD
μs
tersblk
Erase Flash Block execution time
160
800
ms
tersscr
Erase Flash Sector execution time
20
100
ms
tpgmsec2k
Program Section execution time (2 KB flash sec‐
tor)
TBD
ms
trd1all
Read 1s All Blocks execution time
2.8
ms
trdonce
Read Once execution time
35
μs
tpgmonce
Program Once execution time
50
TBD
μs
tersall
Erase All Blocks execution time
320
1600
ms
tvfykey
Verify Backdoor Access Key execution time
35
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
6.4.1.3 Flash (FTFL) Current and Power Parameters
Table 19. Flash (FTFL) current and power parameters
Symbol
Description
Typ.
Unit
IDD_PGM
Worst case programming current in program flash
10
mA
6.4.1.4 Reliability Characteristics
Table 20. NVM reliability characteristics
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
TBD
years
tnvmretp1k Data retention after up to 1 K cycles
10
TBD
years
tnvmretp100 Data retention after up to 100 cycles
15
TBD
years
nnvmcycp
Cycling endurance
10 K
TBD
cycles
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on Tjavg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C
Peripheral operating requirements and behaviors
K20 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
29
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