teewr16" />
參數(shù)資料
型號(hào)： MK60DX256ZVLQ10
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 29/79頁(yè)
文件大?。?/td> 0K
描述： IC ARM CORTEX MCU 256KB 144LQFP
標(biāo)準(zhǔn)包裝： 300
系列： Kinetis
核心處理器： ARM? Cortex?-M4
芯體尺寸： 32-位
速度： 100MHz
連通性： CAN，EBI/EMI，以太網(wǎng)，I²C，IrDA，SDHC，SPI，UART/USART，USB，USB OTG
外圍設(shè)備： DMA，I²S，LVD，POR，PWM，WDT
輸入/輸出數(shù)： 100
程序存儲(chǔ)器容量： 256KB（256K x 8）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 64K x 8
電壓 - 電源 (Vcc/Vdd)： 1.71 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 33x16b，D/A 2x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 105°C
封裝/外殼： 144-LQFP
包裝： 托盤
Table 21. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
teewr16bers Word-write to erased FlexRAM location
execution time
—
175
260
μs
teewr16b32k
teewr16b64k
teewr16b128k
teewr16b256k
Word-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
385
475
650
1000
1800
2000
2400
3200
μs
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
360
540
μs
teewr32b32k
teewr32b64k
teewr32b128k
teewr32b256k
Longword-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
630
810
1200
1900
2050
2250
2675
3500
μs
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol
Description
Min.
Typ.
Max.
Unit
IDD_PGM
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
IDD_ERS
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
50
—
years
tnvmretp1k Data retention after up to 1 K cycles
20
100
—
years
nnvmcycp Cycling endurance
10 K
50 K
—
cycles
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
50
—
years
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc.
35
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MK60DX256ZVMD10 制造商:Freescale Semiconductor 功能描述:MCU 32-bit K60 ARM Cortex M4 RISC 256KB Flash 1.8V/2.5V/3.3V 144-Pin MAP-BGA Tray 制造商:Freescale Semiconductor 功能描述:KINETIS 256K ENET - Bulk 制造商:Freescale Semiconductor 功能描述:IC ARM CORTEX MCU 256KB 144BGA 制造商:Freescale Semiconductor 功能描述:MCU KINETIS K60 CORTEX M4 制造商:Freescale Semiconductor 功能描述:MCU, KINETIS, K60, CORTEX M4, 144MAP 制造商:Freescale Semiconductor 功能描述:K60 Series 32 Bit 256 K Flash 128 K RAM Cortex M4/DSP Microcontroller-MAPBGA-144 制造商:Freescale Semiconductor 功能描述:IC 32BIT MCU KINETIS K60 100MHZ 144-MAPBGA; Controller Family/Series:(ARM Cortex - M4) Kinetis K60; Core Size:32bit; No. of I/O's:100; Supply Voltage Min:1.71V; Supply Voltage Max:3.6V; Digital IC Case Style:MAPBGA; No. of Pins:144 ;RoHS Compliant: Yes 制造商:Freescale 功能描述:MCU 32-bit K60 ARM Cortex M4 RISC 256KB Flash 1.8V/2.5V/3.3V 144-Pin MAP-BGA Tray
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