參數(shù)資料
型號: ML40215-S-120
英文描述: High Reliability Semiconductor Schottky Detector Diodes
中文描述: 高可靠性的半導體探測器肖特基二極管
文件頁數(shù): 2/4頁
文件大?。?/td> 115K
代理商: ML40215-S-120
Schottky Detector Diodes
ML 40215-S-120, ML 40215-S-276
The Preliminary Specifications Data Sheet Contain Typical Electrical Specifications Which May Change Prior to Final Introduction.
M/A-COM Ltd.
North America:
Tel. (800) 366-2266
i
Asia/Pacific:
Fax (800) 618-8883
Tel. +85 2 2111 8088
Fax +85 2 2111 8087
i
Europe:
Tel. +44 (1344) 869-595
Fax +44 (1344) 300-020
Electrical Measurements at Room Temperature d.c. and a.c. Parameters
MIL-STD-750
Test Method
4016
4011
BS9300
1411
BS9300
1404
Test
Limits
Max
500
0.4
No.
1
2
3
Characteristics
Reverse Current
Forward Voltage
Tangential Signal
Sensitivity
Video Impedance
Symbol
I
R1
V
F
T
SS
Conditions
V
R
= 1V
I
F
= 1mA
F = 16 GHz
See Note 1
F = 16 GHz
see Note 2
Min
-
-
-52
Units
nA
V
dBm
4
Z
V
1
2
kohm
Notes
: 1. T
is measured with a video amplifier bandwidth of 2 MHz and a nominal amplifier noise figure of 3 dB. DC impedance is 10 kohms and DC
forward bias is 20μA.
2. Video Impedance is measured with RF power of -30dBm and a DC forward bias of 20 μA.
Electrical Measurements at High and Low Temperature, -55 and +150°C
MIL-STD-750
Test Method
4016
Test
Limits
Max
100
No.
1
Characteristics
Reverse Current
Symbol
I
R
Conditions
V
R
- 1V
Min
-
Units
μA
Parameter Drift Values
MIL-STD-750
Test Method
4011
Test
No.
1
Characteristics
Forward Voltage
Symbol
V
F
Conditions
I
F
= 1 mA
Change Limits
'
± 10%
Conditions for High Temperature Reverse Bias Burn-In
No.
1
2
Characteristics
Reverse Voltage
Ambient Temperature
Symbol
V
R
T
amb
Conditions
1.0
+ 150 (+0,-5)
Units
V
°C
Conditions for Power Burn-In and Operating Life Tests
No.
1
2
Characteristics
Forward Current
Ambient Temperature
Symbol
I
F
T
amb
Conditions
3.0
+ 125 (+0,-5)
Units
mA
°C
Electrical Measurements at Intermediate Points and Completion of Endurance Testing
MIL-STD-750
Test Method
4011
Test
Limits
Max
0.4
No.
1
Characteristics
Forward Voltage
Symbol
V
F
Conditions
I
F
= 1 mA
Min
Units
V
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