參數(shù)資料
型號: MM908E621ACDWB
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror
中文描述: 綜合四半橋和三高的嵌入式微控制器和LIN高端側(cè)鏡
文件頁數(shù): 13/62頁
文件大?。?/td> 540K
代理商: MM908E621ACDWB
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
908E621
STATIC ELECTRICAL CHARACTERISTICS
SWITCHABLE V
DD
OUTPUT HVDD
Overcurrent Shutdown
I
HVDDOC
25
35
50
mA
Overcurrent Shutdown Blanking Time
(20)
HVDDT1:0 = 00
HVDDT1:0 = 01
HVDDT1:0 = 10
HVDDT1:0 = 11
t
HVDDOCB
950
536
234
78
μs
Overcurrent Flag Delay
(20)
t
HVDDOCFD
0.5
ms
Drop-Out Voltage @ I
LOAD
= 20 mA
V
HVDDDROP
110
300
mV
V
SUP
DOWN SCALER
(21)
Voltage Ratio (RATIO
VSUP
= V
SUP
/ V
ADOUT
)
RATIO
VSUP
4.75
5.0
5.25
INTERNAL DIE TEMPERATURE SENSOR
(21)
Voltage / Temperature Slope
(20)
S
TtoV
26
mV/°C
Output Voltage @25°C
V
T25
1.7
1.9
2.1
V
Notes
20.
21.
This parameter is guaranteed by process monitoring but is not production tested.
This parameter is guaranteed only if correct trimming was applied
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V
V
SUP
16 V, -40
°
C
T
J
125
°
C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T
A
= 25
°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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