參數(shù)資料
型號(hào): MMBD2004S-13
廠商: DIODES INC
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 70K
代理商: MMBD2004S-13
DS30281 Rev. 5 - 2
2 of 2
MMBD2004S
www.diodes.com
0
100
200
T , AMBIENT TEMPERATURE (C)
Fig. 1 Power Dissipation Derating
A
P
,
POWER
D
ISSIP
A
TION
(mW)
d
0
100
200
300
400
500
0
400
800
1200
1600
2000
I
,
INST
ANT
A
NEOUS
FOR
W
A
RD
CURRENT
(
A
)
F
m
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig.2 Typical Forward Characteristics, per element
F
100
1.0
10
0.1
0.01
1000
T= 150 C
j
°
T= 25 C
j
°
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to part number above.
Example: MMBD2004S-7-F.
Device
Packaging
Shipping
MMBD2004S-7
SOT-23
3000/Tape & Reel
Ordering Information (Note 4)
KXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
KXX
YM
Marking Information
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
8
9
O
N
D
0
50
100
150
200
250
300
350
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics, per element
R
100
1.0
10
0.1
0.01
0.001
1000
T = 150 C
j
°
T= 75 C
j
°
T= 25 C
j
°
Year
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
MN
P
R
S
T
U
V
W
0.7
0.8
0.01
0.1
1.0
10
100
C
,
T
O
T
A
L
C
AP
ACIT
ANCE
(pF)
T
Fig. 4 Typical Total Capacitance
vs. Reverse Voltage, per element
V , REVERSE VOLTAGE (V)
R
0.9
1.0
1.1
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