參數(shù)資料
型號(hào): MMBD3004S
廠商: LITE-ON SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: GREEN, PLASTIC PACKAGE-3
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 186K
代理商: MMBD3004S
MMBD3004S
SURFACE MOUNT
FAST SWITCHING DIODE
REVERSE VOLTAGE – 300 Volts
FORWARD CURRENT – 0.225 Ampere
FEATURES
Fast switching speed
Ideally suited for automatic insertion
For general purpose switching applications
MECHANICAL DATA
Case: SOT-23 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Moisture sensitivity: Level 1 per J-STD-020D
Lead free in RoHS 2002/95/EC compliant
SOT-23
SOT-23
Dim.
Min.
Max.
A
0.90
1.15
A1
0.00
0.10
b
0.30
0.50
c
0.08
0.15
D
2.80
3.00
E
2.25
2.55
E1
1.20
1.40
e
0.95 Typ.
e1
1.80
2.00
L
0.55 Ref.
L1
0.30
0.50
Dimensions in millimeter
Maximum Ratings & Thermal Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Symbol
MMBD3004S
Units
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
350
300
V
RMS Reverse Voltage
VR(RMS)
212
V
Forward Continuous Current
IFM
225
mA
Non-Repetitive Peak Forward Current
@t=1us
@t=1s
IFSM
4
1
A
Repetitive Peak Forward Current
IFRM
625
Power Dissipation
PD
350
mW
Thermal Resistance Junction to Ambient
RΘJA
357
/W
Operating Temperature Range
TJ
150
Storage Temperature Range
TSTG
-65~+150
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
MMBD3004S
Unit
Reverse Breakdown Voltage
IR = 150uA
VBR
350
V
Maximum Forward Voltage
IF = 20mA
IF = 100mA
IF = 200mA
VF
870
1000
1250
mV
Maximum DC Reverse Current
at Rated DC Blocking Voltage
VR = 240V
IR
0.1
uA
Typical Diode Capacitance
VR =0V,f=1MHz
CD
5
pF
Reverse Recovery time
Irr=3mA, IF=30mA,
RL=100
trr
50
ns
REV. 2, Oct-2010, KSYR83
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