參數(shù)資料
型號: MMBD6050-V-GS08
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: SWITING 70V 0.2A 3PIN SOT-23 - Tape and Reel
中文描述: Diodes (General Purpose, Power, Switching) 70 Volt 200mA 4ns 500mA IFSM
文件頁數(shù): 2/5頁
文件大?。?/td> 85K
代理商: MMBD6050-V-GS08
MMBD6050
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 15-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85735
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Dynamic Forward Resistance vs. Forward Current
Fig. 2 -
Admissible Power Dissipation vs. Ambient Temperature
Fig. 3 -
Dynamic Forward Resistance vs. Forward Current
Fig. 4 -
Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse breakdown voltage
I
R
= 100 μA
I
F
= 1 mA
I
F
= 100 mA
Reverse leakage current
V
R
= 50 V
Reverse recovery time
I
F
= I
R
= 10 mA, i
R
= 1 mA
Diode capacitance
V
R
= 0
SYMBOL
V
(BR)
V
F
V
F
I
R
t
rr
C
D
MIN.
70
0.55
0.85
TYP.
MAX.
UNIT
V
V
V
nA
ns
pF
Forward voltage
0.7
1.1
100
4
2.5
r
w
a
f
(
10
100
1
1
100
10
18861
I
F
- For
w
ard C
u
rrent (mA)
200
18889
T
am
b
- Am
b
ient Temperat
u
re (
°
C )
500
400
300
200
100
20 40 60 80 100 120 140 160 180
0
0
P
-
b
l
w
e
t
18662
1
0.01
10
100
1000
10000
r
w
a
f
(
1
10
0.1
100
I
F
- For
w
ard C
u
rrent (mA)
= 25
°
C
f = 1 kHz
T
j
18664
2
V
R
- Re
v
erse
V
oltage (
V
)
4
6
8
0
1.1
1.0
0.9
0.8
0.7
10
C
D
(
V
R
)
D
(
V
)
v
e
= 25
°
C
f = 1 MHz
T
j
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