參數(shù)資料
型號: MMBF2201NT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-70, 3 PIN
文件頁數(shù): 17/33頁
文件大?。?/td> 324K
代理商: MMBF2201NT3
9–13
Reliability and Quality Assurance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Table 1–2 – Time Dependent Failure Mechanisms in Semiconductor Devices
(Applicable to Discrete and Integrated Circuits)
Device
Association
Process
Relevant
Factors
Accelerating
Factors
Typical
Activation
Energy in eV
Model
Reference
Silicon Oxide
Silicon–Silicon
Oxide Interface
Metallization
Bond and Other
Mechanical Interfaces
Various Water Fab,
Assembly, and
Silicon Defects
Surface Charges
Inversion, Accumulation
Oxide Pinholes
Dielectric Breakdown
(TDDB)
Charge Loss
Electromigration
Corrosion
Chemical
Galvanic
Electrolytic
Intermetallic
Growth
Metal Scratches
Mask Defects, etc.
Silicon Defects
Mobile Ions
E/V, T
E, T
T, J
Grain Size
Doping
Contamination
T, Impurities
Bond Strength
T, V
E, T
J, T
H, E/V, T
T
T, V
1.0
0.7–1.0 (Bipolar)
1.0 (Bipolar)
0.3–0.4 (MOS)
0.3 (MOS)
0.8 (MOS)
EPROM
1.0 Large grain Al
(glassivated)
0.5
Small grain Al
0.7 Cu–Al/Cu–Si–Al
(sputtered)
0.6–0.7
(for electrolysis)
E/V may have
thresholds
1.0 (Au/Al)
0.5–0.7 eV
0.5 eV
Fitch, et al.
Peck
1984 WRS
Hokari, et al.
Domangue, et al.
Crook, D.L.
Gear, G.
Nanda, et al.
Black, J.R.
Lycoudes, N.E.
Fitch, W.T
Howes, et al.
MMPD
1A
2
18
5
3
4
11
6
7
12
8
9
10
13
V = voltage; E = electric field; T = temperature; J = current density; H = humidity
NO. REFERENCE
1A
1.0 eV activation for leakage type failures.
Fitch, W.T.; Greer, P.; Lycoudes, N.; ‘‘Data to Support 0.001%/1000
Hours for Plastic I/C’s.’’ Case study on linear product shows 0.914 eV
activation energy which is within experimental error of 0.9 to 1.3 eV
activation energies for reversible leakage (inversion) failures reported
in the literature.
1B
0.7 To 1.0 eV for oxide defect failures for bipolar structures. This is
under investigation subsequent to information obtained from 1984
Wafer Reliability Symposium, especially for bipolar capacitors with
silicon nitride as dielectric.
2
1.0 eV activation for leakage type failures.
Peck, D.S.; ‘‘New Concerns About Integrated Circuit Reliability’’ 1978
Reliability Physics Symposium.
3
0.36 eV for dielectric breakdown for MOS gate structures.
Domangue, E.; Rivera, R.; Shedard, C.; ‘‘Reliability Prediction Using
Large MOS Capacitors’’, 1984 Reliability Physics Symposium.
4
0.3 eV for dielectric breakdown.
Crook, D.L.; ‘‘Method of Determining Reliability Screens for Time
Dependent Dielectric Breakdown’’, 1979 Reliability Physics
Symposium.
5
1.0 eV for dielectric breakdown.
Hokari, Y.; et al.; IEDM Technical Digest, 1982.
6
1.0 eV for large grain Al–Si (compared to line width).
Nanda, Vangard, Gj–P; Black, J.R.; ‘‘Electromigration of Al–Si Alloy
Films’’, 1978 Reliability Physics Symposium.
7
0.5 eV Al, 0.7 eV Cu–Al small grain (compared to line width).
Black, J.R.; ‘‘Current Limitation of Thin Film Conductor’’ 1982 Reli-
ability Physics Symposium.
8
0.65 eV for corrosion mechanism.
Lycoudes, N.E.; ‘‘The Reliability of Plastic Microcircuits in Moist
Environments’’, 1978 Solid State Technology.
9
1.0 eV for open wires or high resistance bonds at the pad bond
due to Au–Al intermetallics.
Fitch, W.T.; ‘‘Operating Life vs Junction Temperatures for Plastic
Encapsulated I/C (1.5 mil Au wire)’’, unpublished report.
10
0.7 eV for assembly related defects.
Howes, M.G.; Morgan, D.V.; ‘‘Reliability and Degradation, Semi-
conductor Devices and CIrcuits’’ John Wiley and Sons, 1981.
11
Gear, G.; ‘‘FAMOUS PROM Reliability Studies’’, 1976 Reliability
Physics Symposium.
12
Black, J.R.: unpublished report.
13
Motorola Memory Products Division; unpublished report.
相關(guān)PDF資料
PDF描述
MMBF2202PT3 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMBF5484LT3 VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
MMBF5486LT1 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
MMBFJ112D87Z N-CHANNEL, Si, SMALL SIGNAL, JFET
MMBFJ113D87Z N-CHANNEL, Si, SMALL SIGNAL, JFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBF2201PT1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
MMBF2202PT1 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMBF2202PT1_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
MMBF2202PT1G 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMBF2202PT3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS