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參數(shù)資料
| 型號： | MMBT2222A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SMALL SIGNAL NPN TRANSISTOR |
| 中文描述： | 小信號NPN晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 63K |
| 代理商： | MMBT2222A |
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-Ambient Max
Device mounted on a PCB area of 1 cm
2
.
357.1
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= -3 V)
Base Cut-off Current
(V
BE
= -3 V)
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Collector-Base
Saturation Voltage
h
FE
DC Current Gain
V
CE
= 60 V
10
nA
I
BEX
V
CE
= 60 V
20
nA
I
CBO
V
CB
= 75 V
V
CB
= 75 V T
j
= 150
o
C
V
EB
= 3 V
10
10
nA
μ
A
nA
I
EBO
15
I
C
= 10 mA
40
V
I
C
= 10
μ
A
75
V
I
E
= 10
μ
A
6
V
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
0.3
1
V
V
0.6
1.2
2
V
V
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 1 V
I
C
= 500 mA V
CE
= 10 V
35
50
75
100
50
40
300
f
T
Transition Frequency
I
C
= 20 mA V
CE
= 20V f = 100MHz
270
MHz
C
CBO
Collector-Base
Capacitance
Emitter-Base
Capacitance
Noise Figure
I
E
= 0 V
CB
= 10 V f = 1 MHz
4
8
pF
C
EBO
I
C
= 0 V
EB
= 0.5 V f = 1MHz
20
25
pF
NF
I
C
= 0.1 mA V
CE
= 10 V f = 1 KHz
f = 200 Hz R
G
= 1 K
V
CE
= 10 V I
C
= 1 mA f = 1 KHz
V
CE
= 10 V I
C
= 10 mA f = 1 KHz
V
CE
= 10 V I
C
= 1 mA f = 1 KHz
V
CE
= 10 V I
C
= 10 mA f = 1 KHz
4
dB
h
ie
Input Impedance
2
0.25
8
1.25
K
K
10
-4
10
-4
h
re
Reverse Voltage Ratio
8
4
h
fe
Small Signal Current
Gain
V
CE
= 10 V I
C
= 1 mA f = 1 KHz
V
CE
= 10 V I
C
= 10 mA f = 1 KHz
V
CE
= 10 V I
C
= 1 mA f = 1 KHz
V
CE
= 10 V I
C
= 10 mA f = 1 KHz
50
75
300
375
h
oe
Output Admittance
5
25
35
200
μ
S
μ
S
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
MMBT2222A
2/5
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| MMBT2222A MCC | 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 - free partial T/R at 500. |
| MMBT2222A,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| MMBT2222A/E8 | 制造商:Vishay Intertechnologies 功能描述:TRANSISTOR,BJT,NPN,40V V(BR)CEO,600MA I(C),TO-236AB |
| MMBT2222A_05 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
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