參數(shù)資料
型號: MMBT2222AW
廠商: Electronic Theatre Controls, Inc.
英文描述: Mini size of Discrete semiconductor elements
中文描述: 迷你型離散半導(dǎo)體元件
文件頁數(shù): 1/5頁
文件大?。?/td> 63K
代理商: MMBT2222AW
MMBT2222A
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
I
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
I
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
I
TAPE & REEL PACKING
I
THE PNP COMPLEMENTARY TYPE IS
MMBT2907A
APPLICATIONS
I
WELL SUITABLE FOR PORTABLE
EQUIPMENT
I
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
February 2003
SOT-23
Type
Marking
MMBT2222A
M22
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Parameter
Value
75
40
6
0.6
0.8
350
-65 to 150
150
Unit
V
V
V
A
A
mW
o
C
o
C
Collector-Emitter Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Total Dissipation at T
amb
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
1/5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2222AW_10 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR
MMBT2222AWT1 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222AWT1_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor
MMBT2222AWT1G 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222AWT1GOSDKR-ND 制造商: 功能描述: 制造商:undefined 功能描述: