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參數(shù)資料
| 型號(hào)： | MMBT2222AW |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Mini size of Discrete semiconductor elements |
| 中文描述： | 迷你型離散半導(dǎo)體元件 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 63K |
| 代理商： | MMBT2222AW |
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MMBT2222A
5/5
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PDF描述 |
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| MMBT2222A | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2222A-7 | SWITCH DETECTOR 5MM VERT |
| MMBT2222A | NPN General Purpose Amplifier |
| MMBT2222A | Small Signal Transistor (NPN) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222AW_10 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
| MMBT2222AWT1 | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AWT1_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
| MMBT2222AWT1G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AWT1GOSDKR-ND | 制造商: 功能描述: 制造商:undefined 功能描述: |
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