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參數(shù)資料
| 型號： | MMBT2222LT1 |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號晶體管 |
| 中文描述： | NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 786K |
| 代理商： | MMBT2222LT1 |
RECTRON
SEMICONDUCTOR
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT2222LT1
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
NOTES :
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS
SYMBOL
UNITS
417
-
Volts
oC/W
Thermal Resistance Junction to Ambient
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1) @TA=25
oC Derate above 25oC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
R θJA
VF
VALUE
MAX.
-
TYP.
-
MIN.
UNITS
-
mW
-
300
1. Alumina=0.4*0.3*0.024in. 99.5% alumina.
-55 to +150
oC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
OC ambient temperature unless otherwise specified.
0.118(3.000)
0.012(0.30)
0.020(0.50)
0.003(0.080)
0.006(0.150)
0.110(2.800)
0.019(2.00)
0.071(1.80)
0.100(2.550)
0.089(2.250)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.037(0.950)TYP
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
*
Power dissipation
PCM
0.3 W(Tamb=25OC)
Collector current
ICM
0.6
A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ,Tstg: -55
OCto+150OC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2222LT1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1_01 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1_06 | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Silicon |
| MMBT2222LT1G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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