參數(shù)資料
型號(hào): MMBT3904WT3
廠(chǎng)商: ON SEMICONDUCTOR
元件分類(lèi): 小信號(hào)晶體管
英文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-70, 3 PIN
文件頁(yè)數(shù): 26/29頁(yè)
文件大?。?/td> 485K
代理商: MMBT3904WT3
NPN MMBT3904WT1 PNP MMBT3906WT1
2–337
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3904WT1
TYPICAL STATIC CHARACTERISTICS
Figure 15. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h
,DC
CURRENT
GAIN
(NORMALIZED)
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
FE
VCE = 1.0 V
TJ = +125°C
+25
°C
–55
°C
MMBT3904WT1
Figure 16. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V
,COLLECT
OR
EMITTER
VOL
TAGE
(VOL
TS)
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
CE
IC = 1.0 mA
TJ = 25°C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
MMBT3904WT1
Figure 17. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
,VOL
TAGE
(VOL
TS)
1.0
2.0
5.0
10
20
50
0
100
– 0.5
0
0.5
1.0
0
60
80
120
140
160
180
20
40
100
COEFFICIENT
(mV/
C)
200
– 1.0
– 1.5
– 2.0
200
°
TJ = 25°C
VBE(sat) @ IC/IB =10
VCE(sat) @ IC/IB =10
VBE @ VCE =1.0 V
+25
°C TO +125°C
–55
°C TO +25°C
+25
°C TO +125°C
–55
°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
MMBT3904WT1
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