參數(shù)資料
型號(hào): MMBT3904WT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-70, 3 PIN
文件頁數(shù): 29/29頁
文件大小: 485K
代理商: MMBT3904WT3
NPN MMBT3904WT1 PNP MMBT3906WT1
2–340
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3906WT1
STATIC CHARACTERISTICS
Figure 31. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h
,DC
CURRENT
GAIN
(NORMALIZED)
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
FE
VCE = 1.0 V
TJ = +125°C
+25
°C
–55
°C
MMBT3906WT1
Figure 32. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V
,COLLECT
OR
EMITTER
VOL
TAGE
(VOL
TS)
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
CE
IC = 1.0 mA
TJ = 25°C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
MMBT3906WT1
Figure 33. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 34. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
,V
OL
TA
G
E
(V
OL
TS)
1.0
2.0
5.0 10
20
50
0
100
–0.5
0
0.5
1.0
0
60
80
120
140
160
180
20
40
100
200
–1.0
–1.5
–2.0
200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
+25
°C TO +125°C
–55
°C TO +25°C
+25
°C TO +125°C
–55
°C TO +25°C
qVC FOR VCE(sat)
qVS FOR VBE(sat)
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
MMBT3906WT1
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