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參數(shù)資料
| 型號： | MMBT3906LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Transistor(PNP Silicon) |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | MMBT3906LT3G |
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-Ambient Max
Device mounted on a PCB area of 1 cm
2
357.1
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= 3 V)
Collector Cut-off
Current (V
BE
= 3 V)
V
CE
= -30 V
-50
nA
I
BEX
V
CE
= -30 V
-50
nA
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -1 mA
-40
V
I
C
= -10
μ
A
-60
V
I
E
= -10
μ
A
-6
V
I
C
= -10 mA I
B
= -1 mA
I
C
= -50 mA I
B
= -5 mA
-0.25
-0.4
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -10 mA I
B
= -1 mA
I
C
= -50 mA I
B
= -5 mA
-0.65
-0.85
-0.95
V
V
h
FE
DC Current Gain
I
C
= -0.1 mA V
CE
= -1 V
I
C
= -1 mA V
CE
= -1 V
I
C
= -10 mA V
CE
= -1 V
I
C
= -50 mA V
CE
= -1 V
I
C
= -100 mA V
CE
= -1 V
60
80
100
60
30
300
f
T
Transition Frequency
I
C
= -10mA V
CE
= -20 V f = 100MHz
250
MHz
NF
Noise Figure
V
CE
= -5 V I
C
= -0.1 mA f = 10 Hz
to 15.7 KHz R
G
= 1 K
I
E
= 0 V
CB
= -5 V f = 100 KHz
4
dB
C
CBO
Collector-Base
Capacitance
Emitter-Base
Capacitance
Delay Time
6
pF
C
EBO
I
C
= 0 V
EB
= -0.5 V f = 100 KHz
25
pF
t
d
I
C
= -10 mA I
B
= -1 mA
V
CC
= -3V
35
ns
t
r
Rise Time
35
ns
t
s
t
f
Storage Time
I
C
= -10 mA I
B1
= -I
B2
= -1 mA
V
CC
= -3V
225
ns
Fall Time
72
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
MMBT3906
2/4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906M | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR |
| MMBT3906Q-7-F | 制造商:Diodes Incorporated 功能描述:BJT,PNP,200MA,40V,MMBT3906,SOT23,AEC-Q - Tape and Reel |
| MMBT3906R-DK | 制造商:Diodes Incorporated 功能描述:200 MA, 40 V, PNP, SI, SMALL SIGNAL TRANSISTOR |
| MMBT3906RF | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:350mW, PNP Small Signal Transistor |
| MMBT3906RFG | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:350mW, PNP Small Signal Transistor |
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