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參數(shù)資料
| 型號： | MMBTA42 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | NPN Silicon Transistor for High Voltages |
| 中文描述： | NPN硅晶體管的高電壓 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | MMBTA42 |
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MMBTA42
4/4
相關PDF資料 |
PDF描述 |
|---|---|
| MMBTA42 | Mini size of Discrete semiconductor elements |
| MMBTA42 | High Voltage Transistors |
| MMBTA42LT1 | High Voltage Transistors(NPN Silicon) |
| MMBTA42 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBTA42-7 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA42 T/R | 功能描述:開關晶體管 - 偏壓電阻器 TRANS SW TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMBTA42,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA42 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-23 |
| MMBTA42_D87Z | 功能描述:兩極晶體管 - BJT NPN Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA42_Q | 功能描述:兩極晶體管 - BJT SOT-23 NPN HIGH VOLT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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