- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄45334 > MMBZ33VAL/DG (NXP SEMICONDUCTORS) TVS DIODE, TO-236AB PDF資料下載
參數(shù)資料
| 型號： | MMBZ33VAL/DG |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | TVS DIODE, TO-236AB |
| 封裝： | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 11/15頁 |
| 文件大小： | 78K |
| 代理商： | MMBZ33VAL/DG |
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
5 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
Measured from pin 1 or 2 to pin 3.
Table 8.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 8 kV
Fig 1.
10/1000
s pulse waveform according to
IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
tp (ms)
0
4.0
3.0
1.0
2.0
006aab319
50
100
150
IPP
(%)
0
50 % IPP; 1000 s
100 % IPP; 10 s
001aaa631
IPP
100 %
90 %
t
30 ns
60 ns
10 %
tr = 0.7 ns to 1 ns
Table 9.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
Rth(j-a)
thermal resistance from junction
to ambient
in free air
[1] -
-
460
K/W
[2] -
-
340
K/W
Rth(j-sp)
thermal resistance from junction
to solder point
[3] --50
K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBZ12VAL/DG | TVS DIODE, TO-236AB |
| MMBZ5221BW | 2.4 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5225BW | 3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5228BW | 3.9 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5234BW | 6.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ33VALT1 | 功能描述:TVS二極管陣列 33V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ33VALT1G | 功能描述:TVS二極管陣列 33V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ33VALT1G | 制造商:ON Semiconductor 功能描述:TVS Diode |
| MMBZ33VALT3 | 功能描述:TVS二極管陣列 33V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ33VALT3G | 功能描述:TVS二極管陣列 33V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
發(fā)布緊急采購，3分鐘左右您將得到回復。