參數(shù)資料
型號: MMBZ33VCL
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Double ESD protection diodes for transient overvoltage suppression
中文描述: TVS DIODE, TO-236AB
封裝: PLASTIC, SMD, 3 PIN
文件頁數(shù): 8/15頁
文件大?。?/td> 79K
代理商: MMBZ33VCL
MMBZXVCL_MMBZXVDL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
8 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
[1]
In accordance with IEC 61643-321 (10/1000
μ
s current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
S
Z
temperature coefficient
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
I
Z
= 1 mA
-
8.1
-
mV/K
-
11
-
mV/K
-
14
-
mV/K
-
15.8
-
mV/K
-
23
-
mV/K
-
29.4
-
mV/K
Table 10.
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
MMBZ27VCL: unidirectional and bidirectional
T
amb
= 25
°
C
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
Fig 3.
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
006aab327
10
2
10
10
3
P
PPM
(W)
1
10
2
t
p
(ms)
10
3
10
2
10
1
10
1
T
j
(
°
C)
0
200
150
50
100
006aab321
0.4
0.8
1.2
P
PPM
P
PPM(25
°
C)
0
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