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參數(shù)資料
| 型號： | MMBZ5239ELT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 齊納二極管 |
| 英文描述： | 9.1 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 73K |
| 代理商： | MMBZ5239ELT3G |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 6
1
Publication Order Number:
MMBZ5221ELT1/D
MMBZ5221ELT1 Series
Preferred Device
Zener Voltage Regulators
225 mW SOT23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
225 mW Rating on FR4 or FR5 Board
Zener Voltage Range 2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power 225 W (8 x 20 ms)
PbFree Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20
ms (Note 1)
@ TL ≤ 25°C
Ppk
225
W
Total Power Dissipation on FR5 Board,
Derated above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
556
°C/W
Total Power Dissipation on Alumina
Derated above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
65 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
3
Cathode
1
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
DEVICE MARKING INFORMATION
http://onsemi.com
SOT23
CASE 318
STYLE 8
MARKING
DIAGRAM
1
3
2
1
Bxx M
G
Bxx
= Device Code
xx
= (Refer to page 2)
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Device
Package
Shipping
ORDERING INFORMATION
MMBZ52xxELT1
SOT23
3000/Tape & Reel
MMBZ52xxELT3G
SOT23
(PbFree)
10000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBZ52xxELT1G
SOT23
(PbFree)
3000/Tape & Reel
MMBZ52xxELT3
SOT23
10000/Tape & Reel
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ5239-V | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Zener Diodes |
| MMBZ5239-V-G | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Zener Diodes |
| MMBZ5240B | 功能描述:穩(wěn)壓二極管 10V 0.35W Zener RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5240B_D87Z | 功能描述:穩(wěn)壓二極管 10V 0.35W Zener Diode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| MMBZ5240B_L99Z | 功能描述:穩(wěn)壓二極管 10V 0.35W Zener Diode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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