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參數(shù)資料
| 型號： | MMDF2C03HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 2 Amps, 30 Volts Complementary SO8, Dual(2A,30V,SO-8,N/P溝道功率雙MOSFET) |
| 中文描述： | 功率MOSFET 2安培，30伏特互補(bǔ)SO8封裝，雙（第2A，30V的，蘇- 8，N / P系列溝道功率雙MOSFET的） |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MMDF2C03HD |
MMDF2C03HD
http://onsemi.com
8
I
t, TIME
di/dt = 300 A/ s
Standard Cell Density
t
rr
High Cell Density
t
rr
t
b
t
a
Figure 11. Reverse Recovery Time (t
rr
)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
C
) of 25
°
C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(I
DM
) nor rated voltage (V
DSS
) is exceeded, and that the
transition time (t
r
, t
f
) does not exceed 10 s. In addition the
total power averaged over a complete switching cycle must
not exceed (T
J(MAX)
T
C
)/(R
JC
).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (I
DM
), the energy rating is specified at rated
continuous current (I
D
), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous I
D
can safely be
assumed to equal the values indicated.
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
0.1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1
10
I
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
10
0.1
dc
10 ms
1
100
100
Mounted on 2
″
sq. FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with one die operating, 10s max.
1 ms
100 s
0.1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1
10
I
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
10
0.1
dc
10 ms
1
100
100
Mounted on 2
″
sq. FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with one die operating, 10s max.
1 ms
100 s
10 s
NChannel
PChannel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2N02E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
| MMDF2N02ER2 | 功能描述:MOSFET 25V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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