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參數(shù)資料
| 型號： | MMFT2955E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 1 Amp, 60 Volts P-Channel(1A，60V，P溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 功率MOSFET 1安培60伏特P -通道（第1A，60V的P溝道增強(qiáng)型功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 113K |
| 代理商： | MMFT2955E |
MMFT2955E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250
μ
A)
Zero Gate Voltage Drain Current,
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
V(BR)DSS
IDSS
60
–
–
Vdc
–
–
–
–
1.0
50
μ
Adc
Gate–Body Leakage Current,
(VGS = 15 V, VDS = 0)
IGSS
–
–
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
Static Drain–to–Source On–Resistance, (VGS = 10 V, ID = 0.6 A)
Drain–to–Source On–Voltage, (VGS = 10 V, ID = 1.2 A)
Forward Transconductance, (VDS = 15 V, ID = 0.6 A)
VGS(th)
RDS(on)
VDS(on)
gFS
2.0
–
4.5
Vdc
–
–
0.3
Ohms
–
–
0.48
Vdc
–
7.5
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS= 20 V,
(VDS = 20 V,
VGS
1 MH )
f = 1 MHz)
Ciss
Coss
Crss
–
460
–
Output Capacitance
–
210
–
pF
Reverse Transfer Capacitance
–
84
–
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
td(on)
tr
td(off)
–
18
–
Rise Time
(VDD = 25 V, ID = 1.6 A
VGS= 10 V RG= 50 ohms
VGS = 10 V, RG = 50 ohms,
RGS = 25 ohms)
RGS 25 ohms)
–
29
–
ns
Turn–Off Delay Time
–
44
–
Fall Time
tf
–
32
–
Total Gate Charge
(VDS= 48 V, ID= 1.2 A,
(VDS = 48 V, ID = 1.2 A,
VGS
See Figures 15 and 16
Qg
Qgs
Qgd
–
18
–
Gate–Source Charge
–
2.8
–
nC
Gate–Drain Charge
)
–
7.5
–
SOURCE DRAIN DIODE CHARACTERISTICS
(Note 3.)
Forward On–Voltage
IS = 1.2 A, VGS = 0
IS = 1.2 A, VGS = 0,
dlS/dt = 400 A/
μ
s,
VR = 30 V
VSD
ton
–
1.0
–
Vdc
Forward Turn–On Time
Limited by stray inductance
Reverse Recovery Time
trr
–
90
–
ns
2. Switching characteristics are independent of operating junction temperature.
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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