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參數(shù)資料
| 型號(hào)： | MMPQ2369 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Switching Transistor(NPN開關(guān)晶體管) |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOIC-16 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 198K |
| 代理商： | MMPQ2369 |
P
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CES
Collector-Emitter Breakdown Voltage
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, V
BE
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CB
= 20 V, I
E
= 0, T
A
= 125
°
C
15
40
40
4.5
V
V
V
V
μ
A
μ
A
0.4
30
ON CHARACTERISTICS
h
FE
DC Current Gain*
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 10 mA,V
CE
= 0.35 V,T
A
= -55
°
C
I
C
= 100 mA, V
CE
= 2.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= 125
°
C
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= -55
°
C
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= 125
°
C
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 100 mA, I
B
= 10 mA
40
20
20
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
0.2
0.3
0.25
0.5
0.85
1.02
V
V
V
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.7
0.59
1.15
1.6
Symbol
Parameter
Test Conditions
Min
Max
Units
SMALL SIGNAL CHARACTERISTICS
C
obo
Output Capacitance
C
ibo
Input Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 5.0 V, I
E
= 0, f = 1.0 MHz
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 10 V,
R
G
= 2.0 k
, f = 100 MHz
4.0
5.0
pF
pF
5.0
SWITCHING CHARACTERISTICS
(except MMPQ2369)
t
s
Storage Time
t
on
Turn-On Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
I
B1
= I
B2
= I
C
= 10 mA
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA, I
B2
= 1.5 mA
13
12
ns
ns
t
off
Turn-Off Time
18
ns
NPN Switching Transistor
(continued)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMPQ2369 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R2 | 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2907 | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2907_Q | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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