參數(shù)資料
型號(hào)： MMPQ3467
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： Quad Memory Driver Transistor
中文描述： 4 CHANNEL, Si, POWER TRANSISTOR
封裝： CASE 751B-05, SO-16
文件頁數(shù)： 2/6頁
文件大?。?/td> 162K
代理商： MMPQ3467
T
PNP Switching Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
BEV
Base-Cutoff Current
I
CEX
Collector-Cutoff Current
I
CBO
Collector-Cutoff Current
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30 V, V
BE
= 3.0 V
V
CE
= 30 V, V
BE
= 3.0 V
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 150
°
C
40
40
5.0
V
V
V
nA
nA
μ
A
μ
A
120
100
0.01
15
SWITCHING CHARACTERISTICS
(except for MMPQ3467)
Delay Time
Rise Time
Storage Time
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1.0%
t
d
t
r
t
s
t
f
V
CC
= 30 V, V
BE
= 2.0 V,
I
C
= 500 mA, I
B1
= 50 mA
V
CC
= 30 V, I
C
= 500 mA,
I
B1
= I
B2
= 50 mA
10
30
60
30
ns
ns
ns
ns
I
C
= 150 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
= 1.0 V
I
C
= 1.0 A, V
CE
= 5.0 V
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
= 50 mA
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 100 mA
40
40
40
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.3
0.5
1.0
1.0
1.2
1.6
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.8
I
= 50 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 KHz
V
BE
= 0.5 V, I
C
= 0, f = 1.0 KHz
175
MHz
C
obo
C
ibo
Output Capacitance
Input Capacitance
25
100
pF
pF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMPQ3725 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Switching Transistor
MMPQ3725 WAF 制造商:ON Semiconductor 功能描述:
MMPQ3904 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ3904_Q 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMPQ3904-CUT TAPE 制造商:FAIRCHILD 功能描述:MMPQ39 Series NPN 1 W 40 V 200 mA General Purpose Transistor - SOIC-16
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