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參數(shù)資料
| 型號： | MMPQ6502 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Quad NPN & PNP General Purpose Amplifier |
| 中文描述： | 1000 mA, 30 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOIC-16 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 195K |
| 代理商： | MMPQ6502 |
M
Quad NPN & PNP General Purpose Amplifier
MMPQ6502
These complimentary devices can be used in medium power amplifiers, drivers and
switches with collector currents to 500 mA. These devices are best used when
space is the primary consideration. Sourced from Process 19 & 63. See PN2222A
(NPN) & PN2907A (PNP) for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
30
60
5.0
1.0
V
V
V
A
°
C
-55 to +150
Symbol
Characteristic
Max
Units
MMPQ6502
1000
8.0
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
R
θ
JA
Effective 4 Die
Each Die
125
240
°
C/W
°
C/W
C
CCCCCCC
SOIC-16
E
BEBEBEB
1997 Fairchild Semiconductor Corporation
TRANSISTOR TYPE
NPN
PNP
C
1
B
1
E
1
& C
2
B
2
E
2
C
3
B
3
E
3
& C
4
B
4
E
4
Pin #1
1
2
2
3
3
4
4
1
2
2
3
3
4
4
MMPQ6502, Rev B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMPQ6700 | 功能描述:兩極晶體管 - BJT NPN/PNP Transistor Gen Purp Quad RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ6700_Q | 功能描述:兩極晶體管 - BJT NPN/PNP Transistor Gen Purp Quad RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ6700R1 | 功能描述:兩極晶體管 - BJT 200mA 40V Quad RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ6842 | 制造商:Motorola Inc 功能描述: |
| MMPQ700 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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