參數(shù)資料
型號： MPC8358EVRAGDGA
廠商： Freescale Semiconductor
文件頁數(shù)： 11/95頁
文件大?。?/td> 0K
描述： MPU POWERQUICC II PRO 668-PBGA
標準包裝： 36
系列： MPC83xx
處理器類型： 32-位 MPC83xx PowerQUICC II Pro
速度： 400MHz
電壓： 1.2V
安裝類型： 表面貼裝
封裝/外殼： 668-BBGA 裸露焊盤
供應商設(shè)備封裝： 668-PBGA-PGE（29x29）
包裝： 托盤
MPC8358E PowerQUICC II Pro Processor Revision 2.1 PBGA Silicon Hardware Specifications, Rev. 3
Freescale Semiconductor
19
DDR and DDR2 SDRAM
Table 14 provides the DDR2 capacitance when GVDD(typ) = 1.8 V.
Table 15 provides the recommended operating conditions for the DDR SDRAM component(s) of the
device when GVDD(typ) = 2.5 V.
Input current (0 V
≤VIN ≤ OVDD)IIN
—±10
μA—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to equal 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak noise
on MVREF cannot exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to equal
MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤ V
OUT ≤ GVDD.
Table 14. DDR2 SDRAM Capacitance for GVDD(typ)=1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 15. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.375
2.625
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.18
GVDD + 0.3
V
—
Input low voltage
VIL
–0.3
MVREF – 0.18
V
—
Output leakage current
IOZ
—±10
μA4
Output high current (VOUT = 1.95 V)
IOH
–15.2
—
mA
—
Output low current (VOUT = 0.35 V)
IOL
15.2
—
mA
—
MVREF input leakage current
IVREF
—±10
μA—
Input current (0 V
≤VIN ≤ OVDD)IIN
—±10
μA—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤ VOUT ≤ GVDD.
Table 13. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V (continued)
Parameter/Condition
Symbol
Min
Max
Unit
Notes
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