參數(shù)資料
型號(hào)： MPC8560VT667LB
廠(chǎng)商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 微控制器/微處理器
英文描述： 32-BIT, 667 MHz, RISC PROCESSOR, PBGA783
封裝： 29 X 29 MM, 3.75 MM HEIGHT, 1 MM PITCH, LEAD FREE, FLIP CHIP, PLASTIC, BGA-783
文件頁(yè)數(shù)： 19/108頁(yè)
文件大?。?/td> 1238K
代理商： MPC8560VT667LB
MPC8560 Integrated Processor Hardware Specifications, Rev. 4.2
18
Freescale Semiconductor
DDR SDRAM
6 DDR SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8560.
6.1 DDR SDRAM DC Electrical Characteristics
Table 13 provides the recommended operating conditions for the DDR SDRAM component(s) of the
MPC8560.
Table 14 provides the DDR capacitance.
Table 13. DDR SDRAM DC Electrical Characteristics
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.375
2.625
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.18
GVDD + 0.3
V
4
Input low voltage
VIL
–0.3
MVREF – 0.18
V
4
Output leakage current
IOZ
–10
10
μA5
Output high current (VOUT = 1.95 V)
IOH
–15.2
—
mA
—
Output low current (VOUT = 0.35 V)
IOL
15.2
—
mA
—
MVREF input leakage current
IVREF
—100
μA—
Notes:
1.GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2.MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver.
Peak-to-peak noise on MVREF may not exceed ±2% of the DC value.
3.VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected
to be equal to MVREF. This rail should track variations in the DC level of MVREF.
4.VIH can tolerate an overshoot of 1.2V over GVDD for a pulse width of ≤3 ns, and the pulse width cannot be greater
than tMCK. VIL can tolerate an undershoot of 1.2V below GND for a pulse width of ≤3 ns, and the pulse width
cannot be greater than tMCK.
5.Output leakage is measured with all outputs disabled, 0 V
≤ VOUT ≤ GVDD.
Table 14. DDR SDRAM Capacitance
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, MSYNC_IN
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS
CDIO
—0.5
pF
1
Note:
1.This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak to peak) = 0.2 V.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPC8560VT667LC 功能描述:微處理器 - MPU PQ 3 8560-DRACOM RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線(xiàn)寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類(lèi)型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324
MPC8560VT833LB 功能描述:微處理器 - MPU PQ 3 8560-DRACOM RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線(xiàn)寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類(lèi)型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324
MPC8560VT833LC 功能描述:微處理器 - MPU PQ 3 8560-DRACOM RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線(xiàn)寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類(lèi)型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324
MPC8560VTAQFB 功能描述:微處理器 - MPU PQ 3 8560-DRACOM RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線(xiàn)寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類(lèi)型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324
MPC8560VTAQFC 功能描述:微處理器 - MPU PQ 3 8560-DRACOM RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線(xiàn)寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類(lèi)型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324
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