參數(shù)資料
型號(hào): MPS5179RLRA
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: High Frequency Transistor NPN Silicon
中文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226AA, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 50K
代理商: MPS5179RLRA
MPS5179
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(I
C
= 3.0 mAdc, I
B
= 0)
V
CEO(sus)
12
Vdc
CollectorBase Breakdown Voltage
(I
C
= 0.001 mAdc, I
E
= 0)
V
(BR)CBO
20
Vdc
EmitterBase Breakdown Voltage
(I
E
= 0.01 mAdc, I
C
= 0)
V
(BR)EBO
2.5
Vdc
Collector Cutoff Current
(V
CB
= 15 Vdc, I
E
= 0)
(V
CB
= 15 Vdc, I
E
= 0, T
A
= 150
°
C)
I
CBO
0.02
1.0
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 3.0 mAdc, V
CE
= 1.0 Vdc)
h
FE
25
250
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
CE(sat)
0.4
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
BE(sat)
1.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 1)
(I
C
= 5.0 mAdc, V
CE
= 6.0 Vdc, f = 100 MHz)
f
T
900
2000
MHz
CollectorBase Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 to 1.0 MHz)
C
cb
1.0
pF
Small Signal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 6.0 Vdc, f = 1.0 kHz)
1. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
h
fe
25
300
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