參數(shù)資料
型號: MPS6715RLRM
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AE, 3 PIN
文件頁數(shù): 1/34頁
文件大?。?/td> 324K
代理商: MPS6715RLRM
2–602
Motorola Small–Signal Transistors, FETs and Diodes Device Data
One Watt Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MPS6714
MPS6715
VCEO
30
40
Vdc
Collector – Base Voltage
MPS6714
MPS6715
VCBO
40
50
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS6714
MPS6715
V(BR)CEO
30
40
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPS6714
MPS6715
V(BR)CBO
40
50
Vdc
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
MPS6714
(VCB = 50 Vdc, IE = 0)
MPS6715
ICBO
0.1
Adc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
0.1
Adc
1. Pulse Test: Pulse Width
v 30 ms; Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPS6714
MPS6715
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
相關(guān)PDF資料
PDF描述
MPS6717RL1 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6717RL 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6717RLRE 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6717ZL1 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6724RLRE 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPS6717 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6717G 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6717RLRA 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6717RLRAG 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6724 功能描述:達(dá)林頓晶體管 1A 40V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel