參數(shù)資料
型號: MPS6715RLRM
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AE, 3 PIN
文件頁數(shù): 12/34頁
文件大?。?/td> 324K
代理商: MPS6715RLRM
MPS6714 MPS6715
2–603
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE
60
50
250
Collector – Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
0.5
Vdc
Base – Emitter On Voltage
(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
30
pF
Small–Signal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
hfe
2.5
25
1. Pulse Test: Pulse Width
v 30 ms; Duty Cycle v 2.0%.
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
50
500
10
IC, COLLECTOR CURRENT (mA)
300
200
70
50
30
IB, BASE CURRENT (mA)
1.0
0.8
0.6
0.4
0
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0
IC, COLLECTOR CURRENT (mA)
1.0
–1.2
–1.6
–2.0
–2.4
–2.8
2.0
VCE = 1.0 V
TJ = 25°C
h
V
,VOL
TAGE
(VOL
TS)
q
20
100
0.05
10
0.01 0.02
0.1 0.2
,COLLECT
OR
VOL
TAGE
(VOL
TS)
200
1000
100
20
50
100
0.2
V
CE
0.2
0.6
0.4
–0.8
5.0 10
20
50
100 200
,CURRENT
GAIN
FE
0.5
1.0 2.0
5.0
TJ = 25°C
500 1000
qVB FOR VBE
TJ = 25°C
1.0 2.0
5.0
10
20
50
100 200 500 1000
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
IC =
1000 mA
IC =
500 mA
IC =
10 mA
IC =
50 mA
IC =
100 mA
IC =
250 mA
,TEMPERA
TURE
COEFFICIENT
(mV/
C)
°
VB
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