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參數(shù)資料
| 型號： | MPSA28 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Darlington Transistor |
| 中文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 130K |
| 代理商： | MPSA28 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSA28
MPSA29
Unit
Collector–Emitter Voltage
VCES
VCBO
VEBO
IC
PD
80
100
Vdc
Collector–Base Voltage
80
100
Vdc
Emitter–Base Voltage
12
Vdc
Collector Current — Continuous
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100
μ
Adc, VBE = 0)
MPSA28
MPSA29
V(BR)CES
80
100
—
—
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MPSA28
MPSA29
V(BR)CBO
80
100
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
12
—
—
Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA28
MPSA29
ICBO
—
—
—
—
100
100
nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
(VCE = 80 Vdc, VBE = 0)
MPSA28
MPSA29
ICES
—
—
—
—
500
500
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
—
—
100
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSA28/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR 3
BASE
2
EMITTER 1
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PDF描述 |
|---|---|
| MPSA28 | 300,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| MPSA29 | Darlington Transistor |
| MPSA70 | 1000000 SYSTEM GATE 1.5 VOLT FPGA |
| MPSA70 | Amplifier Transistor(PNP Silicon) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A28 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-92 |
| MPSA28_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
| MPSA28_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Transistors NPN Silicon |
| MPSA28_D26Z | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA28_D27Z | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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