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參數(shù)資料
| 型號(hào)： | MR18R326GAG0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
| 中文描述： | （32Mx18）16個(gè)RIMM的模塊基于576Mb阿芯片，32秒銀行，32K/32ms參考，為2.5V |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大?。?/td> | 259K |
| 代理商： | MR18R326GAG0 |
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Page 1
Version 1.0 Mar. 2004
MR18R326GAG0
Overview
The RIMM
module is a general purpose high- performance
memory module suitable for use in a broad range of applica-
workstations and other applications where high bandwidth
and low latency are required.
The RIMM module consists of 576Mb RDRAM
devices.
These are extremely high-speed CMOS DRAMs organized
as 32M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits up to 1066 MHz transfer
rates while using conventional system and board design
technologies. RDRAM devices are capable of sustained data
transfers at 0.94 ns per two bytes (7.5ns per 16 bytes).
The RDRAM architecture enables the highest sustained
bandwidth for multiple, simultaneous, randomly addressed,
memory transactions. The separate control and data buses
with independent row and column control yield over 95%
bus efficiency. The RDRAM device's 32-bank architecture
supports up to four simultaneous transactions per device.
Features
High speed up to 1066 MHz RDRAM storage
184 edge connector pads with 1mm pad spacing
Module PCB size : 133.35mm x 34.93mm x 1.27mm
(5.25
”
x 1.375
”
x 0.05
”
)
Each RDRAM device has 32 banks, for a total of 512
banks on 1.1GB module
Gold plated edge connector pad contacts
Serial Presence Detect(SPD) support
Operates from a 2.5 volt supply (±5%)
Powerdown self refresh modes
Separate Row and Column buses for higher efficiency
WBGA lead free package (92 balls)
Key Timing Parameters/Part Numbers
The following table lists the frequency and latency bins
available for RIMM modules.
Table 1: Part Number by Freq. & Latency
Form Factor
The RIMM modules are offered in 184-pad 1mm edge
connector pad pitch suitable for 184 contact RIMM connec-
tors. Figure 1 below, shows a sixteen device RIMM module.
Organization
Speed
Part Number
Bin
I/O
Freq.
(MHz)
t
RAC
(Row
Access
Time) ns
512M x 18
-CT9
1066
32P
MR18R326GAG0-CT9
-CM8
800
40
MR18R326GAG0-CM8
(32Mx18)*16pcs RIMM
Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
Figure 1: RIMM Module shown with heat spreader removed
Note: On double sided modules, RDRAM devices are also installed on bottom side of PCB.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR18R326GAG0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
| MR18R326GAG0-CT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
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