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參數(shù)資料
| 型號(hào)： | MR18R326GAG0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
| 中文描述： | （32Mx18）16個(gè)RIMM的模塊基于576Mb阿芯片，32秒銀行，32K/32ms參考，為2.5V |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 259K |
| 代理商： | MR18R326GAG0 |
Page 6
Version 1.0 Mar. 2004
MR18R326GAG0
Absolute Maximum Ratings
DC Recommended Electrical Conditions
Table 4: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with respect to Gnd
- 0.3
V
DD
+ 0.3
V
V
DD,ABS
Voltage on VDD with respect to Gnd
- 0.5
V
DD
+ 1.0
V
T
STORE
Storage temperature
- 50
100
°
C
T
PLATE
Plate temperature
-
92
°
C
Table 5: DC Recommended Electrical Conditions
Symbol
Parameter and Conditions
Min
Max
Unit
V
DD
Supply voltage
2.50 - 0.13
2.50 + 0.13
V
V
CMOS
CMOS I/O power supply at pad for 2.5V controllers:
CMOS I/O power supply at pad for 1.8V controllers:
V
DD
1.8 - 0.1
V
DD
1.8 + 0.2
V
V
V
REF
Reference voltage
1.4 - 0.2
1.4 + 0.2
V
V
SPD
Serial Presence Detector- Positive power supply
2.2
3.6
V
Table 6: RIMM Module Capacity and Number of RDRAM device
RIMM Module Capacity:
1152MB
Number of 576Mb RDRAM devices
16
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| MR18R326GAG0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
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