參數(shù)資料
型號(hào): MR2920
廠商: Shindengen Electric Manufacturing Company, Ltd.
英文描述: Provision for Standby mode operation Partial Resonance Power Supply IC Module
中文描述: 撥備待機(jī)模式操作局部共振電源IC模塊
文件頁(yè)數(shù): 5/19頁(yè)
文件大?。?/td> 226K
代理商: MR2920
Shindengen Electric MFG.CO.,LTD
- 5 -
2.1 Block Diagram
2.2 Pin Function Description
Pin number
Abbreviation
Description
1
Z/C
Trigger input pin
Zero detection voltage: 0.35V
Standby: Up to 4.5V in standby mode.
t
on(min)
to t
on(max)
: 1.5V to 4.5V/0
μ
s to 25
μ
s
Standby: Oscillation stopped at up to 0.8V.
Standby: Oscillation started at 1.8V or higher.
Oscillation start voltage: V
cc
14V
Oscillation stop voltage: V
cc
8.5V
Excess voltage latching voltage:V
cc
=20V
Current supplied V
in
V
cc
at start-up
Start-up circuit OFF:V
cc
14V
Start-up circuit ON: V
cc
7.6V
Excess current detection threshold:0.6V
Excess current detection threshold at standby: 50mV
2
F/B
Feedback signal input pin
3
GND
GND pin
4
V
cc
IC power supply pin
5
V
in
Start pin
6
Emitter
/OCL
Collecter
Main switching device emitter and
current detection pin
Main switching device collector pin
7
2. Block Diagram
MR2900
Application Note
Collector
7
Emitter/OCL
V
cc
4
Z/C
F/B
2
1
6
Thermal
Shutdown
circuit
Zero current
detection
circuit
Soft drive
circuit
Start-up
circuit
R
S
Q
V
OVP
OVP
comparator
V
UL
Unlatch
comparator
V
CC(start)
/V
CC(stop)
UVLO comp
V
CC(startup off)
/V
CC(startup on)
Start-up circuit
UVLO
comparator
Q1
5
V
in
On-dead
timer
ON range
timer
S
R
Q
Standby
circuit
Restart
timer
V
ref
I
F/B
V
TH(OCL)
Excess current
detection
comparator
V
TH(burst limit)
Burst current
limit
comparator
GND
3
相關(guān)PDF資料
PDF描述
MR2940 Provision for Standby mode operation Partial Resonance Power Supply IC Module
MS52C181A 131,072-Word × 8-Bit STATIC RAM +1,048,576-Word × 8-Bit One Time PROM(128k字×8位靜態(tài)RAM+1M字×8位 OTPROM)
MS52C182A 65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM +524,288-Word × 16-Bit or 1,048,576-Word × 8-Bit One Time PROM(64k字×16位或128k字×8位靜態(tài)RAM+512k字×16位或1M字×8位 OTPROM)
MS81V06160 (401,408-word ⅴ 16-bit) FIFO memory
MS82V16520 262,144-Word x 32-Bit x 2-Bank Synchronous Graphics RAM
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