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參數(shù)資料
| 型號： | MRF148A |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power FETs(RF功率場效應管) |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-07, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 154K |
| 代理商： | MRF148A |
MRF148A
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
ON CHARACTERISTICS
V(BR)DSS
IDSS
IGSS
125
—
—
Vdc
—
—
1.0
mAdc
—
—
100
nAdc
Gate Threshold Voltage (VDS = 10 V, ID = 10 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 2.5 A)
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
DYNAMIC CHARACTERISTICS
VGS(th)
VDS(on)
gfs
1.0
2.5
5.0
Vdc
1.0
3.0
5.0
Vdc
0.8
1.2
—
mhos
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (SSB)
Ciss
Coss
Crss
—
62
—
pF
—
35
—
pF
—
3.0
—
pF
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 30 W (PEP), IDQ = 100 mA)
(30 MHz)
(175 MHz)
Gps
—
—
18
15
—
—
dB
Drain Efficiency
(VDD = 50 V, f = 30 MHz, IDQ = 100 mA)
(30 W PEP)
(30 W CW)
η
—
—
40
50
—
—
%
Intermodulation Distortion
(VDD = 50 V, Pout = 30 W (PEP),
f = 30; 30.001 MHz, IDQ = 100 mA)
IMD(d3)
IMD(d11)
ψ
—
—
–35
–60
—
—
dB
Load Mismatch
(VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz,
IDQ = 100 mA, VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 10 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 1.0 A)
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
GPS
IMD(d3)
IMD(d9–13)
—
—
—
20
–50
–70
—
—
—
dB
Figure 1. 2.0 to 50 MHz Broadband Test Circuit
C1, C2, C3, C4, C5, C6 — 0.1
μ
F Ceramic Chip or Equivalent
C7 — 10
μ
F, 100 V Electrolytic
C8 — 100 pF Dipped Mica
L1 — VK200 20/4B Ferrite Choke or Equivalent (3.0
μ
H)
L2 — Ferrite Bead(s), 2.0
μ
H
R1, R2 — 200
, 1/2 W Carbon
R3 — 4.7
, 1/2 W Carbon
R4 — 470
, 1.0 W Carbon
T1 — 4:1 Impedance Transformer
T2 — 1:2 Impedance Transformer
RF
OUTPUT
RF
INPUT
BIAS
0–10 V
50 V
+
–
C1
+
–
C4
C5
C6
C7
C2
C3
R1
R3
T1
T2
DUT
L1
L2
R4
C8
R2
+
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF148AMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF150 | 功能描述:射頻MOSFET電源晶體管 5-150MHz 150Watts 50Volt Gain 17dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1500 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTOR |
| MRF15030 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR |
| MRF15060 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER BIPOLAR TRANSISTORS |
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