參數(shù)資料
型號(hào)： MRF1517T1
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管)
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： POWER, PLASTIC, CASE 466-02, 4 PIN
文件頁(yè)數(shù)： 1/16頁(yè)
文件大?。?/td> 193K
代理商： MRF1517T1
1
MRF1517T1
Motorola, Inc. 2000
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1517T1 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
Excellent Thermal Stability
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
RF Power Plastic Surface Mount Package
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage (1)
VDSS
VGS
ID
PD
25
Vdc
Gate–Source Voltage
±
20
Vdc
Drain Current — Continuous
4
Adc
Total Device Dissipation @ TC = 25
°
C (2)
Derate above 25
°
C
62.5
0.50
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2
°
C/W
(1) Not designed for 12.5 volt applications.
(2) Calculated based on the formula PD =
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF1517/D
SEMICONDUCTOR TECHNICAL DATA
520 MHz, 8 W, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
G
D
S
TJ –TC
R
θ
JC
REV 1
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