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參數(shù)資料
| 型號： | MRF1513NT1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 300K |
| 代理商： | MRF1513NT1 |
MRF1513NT1 MRF1513T1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N
Channel Enhancement
Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large
signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts
Power Gain — 11 dB
Efficiency — 55%
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal
Impedance Parameters
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
N Suffix Indicates Lead
Free Terminations
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5, +40
Vdc
Gate
Source Voltage
V
GS
±
20
Vdc
Drain Current — Continuous
I
D
2
Adc
Total Device Dissipation @ T
C
= 25
°
C
(1)
Derate above 25
°
C
P
D
31.25
0.25
W
W/
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
4
°
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22
A113, IPC/JEDEC J
STD
020
1
260
°
C
1. Calculated based on the formula P
D
=
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF1513
Rev. 6, 3/2005
Freescale Semiconductor
Technical Data
MRF1513NT1
MRF1513T1
520 MHz, 3 W, 12.5 V
LATERAL N
CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466
03, STYLE 1
PLD
1.5
PLASTIC
TJ –TC
R
θ
JC
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1513NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1_0806 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1-CUT TAPE | 制造商:Freescale 功能描述:MRF1513NT1 Series 520 MHz 3 W 12.5 V Lateral N-Ch Broadband RF Power Mosfet |
| MRF1513T1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF1517N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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