參數(shù)資料
型號: MRF1513NT1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET
文件頁數(shù): 2/16頁
文件大?。?/td> 300K
代理商: MRF1513NT1
2
RF Device Data
Freescale Semiconductor
MRF1513NT1 MRF1513T1
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
I
DSS
1
μ
Adc
Gate
Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
I
GSS
1
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 60
μ
A)
V
GS(th)
1.0
1.7
2.1
Vdc
Drain
Source On
Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
V
DS(on)
0.65
Vdc
Dynamic Characteristics
Input Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
33
pF
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
16.5
pF
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
2.2
pF
Functional Tests
(In Freescale Test Fixture)
Common
Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
G
ps
10
11
dB
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
η
50
55
%
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