參數(shù)資料
型號(hào)： MRF1535NT1
廠商： Motorola, Inc.
英文描述： RF Power Field Effect Transistors
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/16頁(yè)
文件大?。?/td> 257K
代理商： MRF1535NT1
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large
signal, common source amplifier applications in
12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
Broadband
Full Power Across the Band: 135
175 MHz
400
470 MHz
450
520 MHz
Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request
N Suffix Indicates Lead
Free Terminations
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5, +40
Vdc
Gate
Source Voltage
V
GS
±
20
Vdc
Drain Current — Continuous
I
D
6
Adc
Total Device Dissipation @ T
C
= 25
°
C
(1)
Derate above 25
°
C
P
D
135
0.50
W
W/
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
175
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.90
°
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22
A113, IPC/JEDEC J
STD
020
1
260
°
C
1. Calculated based on the formula P
D
=
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF1535T1
Rev. 6, 1/2005
Freescale Semiconductor
Technical Data
520 MHz, 35 W, 12.5 V
LATERAL N
CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264
09, STYLE 1
TO
272
PLASTIC
MRF1535T1(NT1)
MRF1535NT1
MRF1535FNT1
MRF1535T1
MRF1535FT1
CASE 1264A
02, STYLE 1
TO
272 STRAIGHT LEAD
PLASTIC
MRF1535FT1(FNT1)
TJ –TC
R
θ
JC
Freescale Semiconductor, Inc., 2005. All rights reserved.
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